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Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 35A 1212-8 PPAK
  SI7617DN-T1-GE3 Datasheet
Package: PowerPAK® 1212-8
Quantity: 13915 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Stock:13,915 Can Ship Immediately
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7617DN-GE3
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 52W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: 1800pF @ 15V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 35A (Tc)
Rds-On-Max-Id-Vgs: 12.3 mOhm @ 13.9A, 10V
Vgs-th-Max-Id: 2.5V @ 250μA
Gate-Charge-Qg-Vgs: 59nC @ 10V
Pd-Power-Dissipation: 52 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 11 ns
Rise-Time: 43 ns
Vgs-Gate-Source-Voltage: 25 V
Id-Continuous-Drain-Current: - 35 A
Vds-Drain-Source-Breakdown-Voltage: - 30 V
Rds-On-Drain-Source-Resistance: 12.3 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 30 ns
Typical-Turn-On-Delay-Time: 40 ns
Qg-Gate-Charge: 20.5 nC
Forward-Transconductance-Min: 35 S
Channel-Mode: Enhancement
Search Part number : "SI761" Included word is 6
Part Number Manufacturer Package Quantity Description
SI7611DN SI QFN1212-8 467
Si7611DN-T1-E3 VISHAY QFN8 490
SI7613DN-T1-E3 VISHAY QFN8 35874
SI7613DN-T1-GE3 Vishay Siliconix PowerPAK® 1212-8 2661 MOSFET P-CH 20V 35A 1212-8 PPAK
SI7615ADN-T1-GE3 Vishay Siliconix PowerPAK® 1212-8 118 MOSFET P-CH 20V 35A 1212-8S
  • SI7613DN-T1-GE3
  • SI7615ADN-T1-GE3
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