SI3483CDV-T1-GE3
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Manufacturer Part#:

SI3483CDV-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6-TSOP
  datasheetSI3483CDV-T1-GE3 Datasheet
Package: SOT-23-6 Thin, TSOT-23-6
Quantity: 29557 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI3483CDV-GE3
Unit-Weight: 0.000705 oz
Mounting-Style: SMD/SMT
Package-Case: SOT-23-6 Thin, TSOT-23-6
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: 6-TSOP
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 4.2W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: 1000pF @ 15V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 8A (Tc)
Rds-On-Max-Id-Vgs: 34 mOhm @ 6.1A, 10V
Vgs-th-Max-Id: 3V @ 250μA
Gate-Charge-Qg-Vgs: 33nC @ 10V
Pd-Power-Dissipation: 2 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 15 ns 10 ns
Rise-Time: 135 ns 15 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 6.1 A
Vds-Drain-Source-Breakdown-Voltage: - 30 V
Rds-On-Drain-Source-Resistance: 34 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 25 ns 30 ns
Typical-Turn-On-Delay-Time: 45 ns 10 ns
Channel-Mode: Enhancement
Search Part number : "SI348" Included word is 4
Part Number Manufacturer Package Quantity Description
SI3483DV-T1-E3 SOT-23-6 Thin, TSOT-23-6 18930 MOSFET P-CH 30V 4.7A 6-TSOP
SI3481DV-T1-E3 VISHAY SOT-23-6 Thin, TSOT-23-6 4337 MOSFET P-CH 30V 4A 6-TSOP
Si3481DV-T1-GE3 VISHAY SOT-23-6 Thin, TSOT-23-6 4060 MOSFET P-CH 30V 4A 6-TSOP
SI3482-A01-GMR Silicon Labs 24-WFQFN Exposed Pad 88 IC CTLR POE 24-48PORT PSE 24-QFN
SI3483CDV-T1-GE3 RELATED PRODUCT PICTURE
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  • SI3481DV-T1-E3
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