SIA456DJ-T1-GE3
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Manufacturer Part#:

SIA456DJ-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A SC70-6
  datasheetSIA456DJ-T1-GE3 Datasheet
Package: PowerPAK® SC-70-6
Quantity: 149236 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SIA456DJ-GE3
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR SC-70-6
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR SC-70-6 Single
Configuration: Single Quad Drain
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 19W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 200V
Input-Capacitance-Ciss-Vds: 350pF @ 100V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 2.6A (Tc)
Rds-On-Max-Id-Vgs: 1.38 Ohm @ 750mA, 4.5V
Vgs-th-Max-Id: 1.4V @ 250μA
Gate-Charge-Qg-Vgs: 14.5nC @ 10V
Pd-Power-Dissipation: 3.5 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 20 ns 12 ns
Rise-Time: 25 ns 20 ns
Vgs-Gate-Source-Voltage: 16 V
Id-Continuous-Drain-Current: 1.1 A
Vds-Drain-Source-Breakdown-Voltage: 200 V
Vgs-th-Gate-Source-Threshold-Voltage: 1.4 V
Rds-On-Drain-Source-Resistance: 1.38 Ohms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 30 ns 16 ns
Typical-Turn-On-Delay-Time: 10 ns 5 ns
Qg-Gate-Charge: 9.5 nC
Channel-Mode: Enhancement
Search Part number : "SIA45" Included word is 2
Part Number Manufacturer Package Quantity Description
SIA450DJ-T1-E3 VISHAY PowerPAK® SC-70-6 687 MOSFET N-CH 240V 1.52A SC70-6
SIA450DJ-T1-GE3 VISHAY PowerPAK® SC-70-6 6899 MOSFET N-CH 240V 1.52A SC70-6
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