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SIA426DJ-T1-GE3
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Manufacturer Part#:

SIA426DJ-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
  SIA426DJ-T1-GE3 Datasheet
Package: PowerPAK® SC-70-6
Quantity: 4060 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SIA426DJ-GE3
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR SC-70-6
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR SC-70-6 Single
Configuration: Single Quad Drain Dual Source
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 19W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: 1020pF @ 10V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 4.5A (Tc)
Rds-On-Max-Id-Vgs: 23.6 mOhm @ 9.9A, 10V
Vgs-th-Max-Id: 1.5V @ 250μA
Gate-Charge-Qg-Vgs: 27nC @ 10V
Pd-Power-Dissipation: 3.5 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 11 ns
Rise-Time: 11 ns
Vgs-Gate-Source-Voltage: 12 V
Id-Continuous-Drain-Current: 4.5 A
Vds-Drain-Source-Breakdown-Voltage: 20 V
Rds-On-Drain-Source-Resistance: 23.6 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 27 ns
Typical-Turn-On-Delay-Time: 12 ns
Channel-Mode: Enhancement
Search Part number : "SIA42" Included word is 3
Part Number Manufacturer Package Quantity Description
SIA427DJ-T1-GE3 VISHAY PowerPAK® SC-70-6 26690 MOSFET P-CH 8V 12A SC-70-6
SIA429DJT-T1-GE3 Vishay Siliconix PowerPAK® SC-70-6 19283 MOSFET P-CH 20V 12A SC-70
SIA421DJ-T1-GE3 VISHAY PowerPAK® SC-70-6 2223 MOSFET P-CH 30V 12A SC70-6
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