SI7322DN-T1-GE3
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Manufacturer Part#:

SI7322DN-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 100V 18A 1212-8
  datasheetSI7322DN-T1-GE3 Datasheet
Package: PowerPAK® 1212-8
Quantity: 168 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7322DN-GE3
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 52W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: 750pF @ 50V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 18A (Tc)
Rds-On-Max-Id-Vgs: 58 mOhm @ 5.5A, 10V
Vgs-th-Max-Id: 4.4V @ 250μA
Gate-Charge-Qg-Vgs: 20nC @ 10V
Pd-Power-Dissipation: 3.8 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 10 ns
Rise-Time: 10 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 5.5 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Rds-On-Drain-Source-Resistance: 58 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 12 ns
Typical-Turn-On-Delay-Time: 10 ns
Channel-Mode: Enhancement
Search Part number : "SI732" Included word is 4
Part Number Manufacturer Package Quantity Description
SI7326DN VISHAY QFN 2319
SI7326DN-T1-E3 VISHAY PowerPAK® 1212-8 98125 MOSFET N-CH 30V 6.5A PPAK 1212-8
SI7326DN-T1-GE3 VISHAY PowerPAK® 1212-8 157607 MOSFET N-CH 30V 6.5A PPAK 1212-8
SI7328DN-T1-E3 VISHAY PowerPAK® 1212-8 37024 MOSFET N-CH 30V 35A PPAK 1212-8
SI7322DN-T1-GE3 RELATED PRODUCT PICTURE
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  • SI7326DN-T1-GE3
  • SI7328DN-T1-E3
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