SI7370DP-T1-E3
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Manufacturer Part#:

SI7370DP-T1-E3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 60V 9.6A PPAK SO-8
  datasheetSI7370DP-T1-E3 Datasheet
Package: PowerPAK® SO-8
Quantity: 47398 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7370DP-T1
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Tradename: TrenchFET/PowerPAK
Package-Case: PowerPAKR SO-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR SO-8
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 1.9W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 60V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 9.6A (Ta)
Rds-On-Max-Id-Vgs: 11 mOhm @ 12A, 10V
Vgs-th-Max-Id: 4V @ 250μA
Gate-Charge-Qg-Vgs: 57nC @ 10V
Pd-Power-Dissipation: 1.9 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 12 ns
Rise-Time: 12 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 9.6 A
Vds-Drain-Source-Breakdown-Voltage: 60 V
Rds-On-Drain-Source-Resistance: 11 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 50 ns
Typical-Turn-On-Delay-Time: 16 ns
Channel-Mode: Enhancement
Search Part number : "SI737" Included word is 2
Part Number Manufacturer Package Quantity Description
SI7370DP-T1-GE3 VISHAY PowerPAK® SO-8 8157 MOSFET N-CH 60V 9.6A PPAK SO-8
SI7374DP-T1-E3 VISHAY PowerPAK® SO-8 570 MOSFET N-CH 30V 24A PPAK SO-8
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