EMB2T2R
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EMB2T2R

Product Category: Transistors (BJT) - Arrays, Pre-Biased
Manufacturer: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
  datasheetEMB2T2R Datasheet
Package: SOT-563, SOT-666
Quantity: 6960 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Rohm Semiconductor
Product Category: Transistors (BJT) - Arrays, Pre-Biased
Series: EMB2
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Package-Case: SOT-563, SOT-666
Mounting-Type: Surface Mount
Supplier-Device-Package: EMT6
Configuration: Dual
Power-Max: 150mW
Transistor-Type: 2 PNP - Pre-Biased (Dual)
Current-Collector-Ic-Max: 100mA
Voltage-Collector-Emitter-Breakdown-Max: 50V
Resistor-Base-R1-Ohms: 47k
Resistor-Emitter-Base-R2-Ohms: 47k
DC-Current-Gain-hFE-Min-Ic-Vce: 68 @ 5mA, 5V
Vce-Saturation-Max-Ib-Ic: 300mV @ 500μA, 10mA
Current-Collector-Cutoff-Max: 500nA
Frequency-Transition: 250MHz
Pd-Power-Dissipation: 150 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Collector-Emitter-Voltage-VCEO-Max: - 50 V
Transistor-Polarity: PNP
Continuous-Collector-Current: - 100 mA
DC-Collector-Base-Gain-hfe-Min: 68
Typical-Input-Resistor: 47 kOhms
Typical-Resistor-Ratio: 1
Peak-DC-Collector-Current: 100 mA

Descriptions

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
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