HFA08TB120
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Manufacturer Part#:

HFA08TB120

Product Category: IC Chips
Manufacturer: Vishay Semiconductor Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO220AC
  datasheetHFA08TB120 Datasheet
Package: TO-220-2
Quantity: 6808 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Semiconductor Diodes Division
Product Category: IC Chips
Series: HEXFREDR
Packaging: Tube
Package-Case: TO-220-2
Mounting-Type: Through Hole
Supplier-Device-Package: TO-220AC
Speed: Fast Recovery = 200mA (Io)
Diode-Type: Standard
Current-Reverse-Leakage-Vr: 10μA @ 1200V
Voltage-Forward-Vf-Max-If: 3.3V @ 8A
Voltage-DC-Reverse-Vr-Max: 1200V (1.2kV)
Current-Average-Rectified-Io: 8A
Reverse-Recovery-Time-trr: 95ns
Capacitance-Vr-F: -
Operating-Temperature-Junction: -55°C ~ 150°C
Features, Applications

Features, Applications


FEATURES

Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level


Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count


DESCRIPTION

is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings 1200 V and 8 A continuous current, the HFA08TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFREDR product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.


25 °C IF(AV) trr (typical) TJ (maximum) Qrr (typical) dI(rec)M/dt (typical) 125 °C IRRM (typical) nC 85 A/μs 4.5 A


PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD TJ, TStg 100 °C TEST CONDITIONS VALUES °C A UNITS V


PARAMETER Cathode to anode breakdown voltage SYMBOL VBR 8.0 A Maximum forward voltage VFM 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM = VR rated = 125 °C, x VR rated 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 1200 TYP. MAX. nH V UNITS


DYNAMIC RECOVERY CHARACTERISTICS (TJ 25 °C unless otherwise specified)

PARAMETER SYMBOL trr Reverse recovery time trr1 trr2 Peak recovery current dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS 1.0 A, dIF/dt = 200 A/μs, 8.0 A dIF/dt = 200 A/μs 200 V MIN. TYP. MAX. A ns UNITS


Reverse recovery charge Peak rate of recovery current during tb

PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-220AC SYMBOL Tlead RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. 6.0 (5.0) TYP. 6.0 0.21 MAX. g oz. kgf cm (lbf in) K/W UNITS °C


HEXFREDR Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics



Search Part number : "HFA08" Included word is 15
Part Number Manufacturer Package Quantity Description
HFA08TB120PBF TO-220 9960 DIODE GEN PURP 1.2KV 8A TO220AC
HFA08TB120S Vishay Semiconductor Diodes Division TO-263 730 DIODE GEN PURP 1.2KV 8A D2PAK
HFA08TB60 Vishay Semiconductor Diodes Division TO-220-2 21128 DIODE GEN PURP 600V 8A TO220AC
HFA08TB60-1 IR TO-262 2110
HFA08TB60PBF Infineon Technologies TO-220-2 25070 DIODE GEN PURP 600V 8A TO220AC
HFA08TB60SPBF IR TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 96 DIODE GEN PURP 600V 8A D2PAK
HFA08TB60STRLP Vishay TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 1130 DIODE GEN PURP 600V 8A D2PAK
HFA08PB120 Vishay Semiconductor Diodes Division TO-247-2 1330 DIODE GEN PURP 1.2KV 8A TO247AC
HFA08PB60 Vishay Semiconductor Diodes Division TO-247-2 4030 DIODE GEN PURP 600V 8A TO247AC
HFA08TB60STRRPBF IR TO-263 10360
HFA08SD60S Vishay Semiconductor Diodes Division TO-252-3, DPak (2 Leads + Tab), SC-63 13370 DIODE GEN PURP 600V 8A DPAK
HFA08SD60SPBF VISHAY TO-252-3, DPak (2 Leads + Tab), SC-63 3057 DIODE GEN PURP 600V 8A DPAK
HFA08SD60STRPBF VISHAY TO-252-3, DPak (2 Leads + Tab), SC-63 27223 DIODE GEN PURP 600V 8A DPAK
HFA08TA60C IR TO220 545
HFA08TA60CPBF IR TO-220-3 9760 DIODE ARRAY GP 600V 4A TO220AB
HFA08TB120 RELATED PRODUCT PICTURE
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