CM100E3U-24F
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CM100E3U-24F

Product Category: IC Chips
Manufacturer: MIT
Description:
  datasheetCM100E3U-24F Datasheet
Package: Module
Quantity: 78 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: MIT
Product Category: IC Chips
Features, Applications

Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) VRRM IF IFM Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Repetitive peak reverse voltage Forward current Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short = 25°C Pulse = 25°C Pulse = 25°C Clamp diode part = 25°C Pulse Conditions Ratings Unit °C V Nm g


Clamp diode part Clamp diode part

Charged part to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value

Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) RG Rth(j-c)Q Rth(j-c)R Rth(j-c')Q VFM trr Qrr Rth(j-c)R Rth(c-f) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage External gate resistance Thermal resistance*1 Thermal resistance Forward voltage drop Reverse recovery time Reverse recovery charge Thermal resistance*1 Contact thermal resistance Test conditions VCE = VCES, VGE = 10mA, VCE = 10V VGE = VCES, VCE = 100A, VGE = 125°C VCE = 10V VGE = 0V VCC = 100A, VGE = 15V VCC = 6.3, Inductive load switching operation = 100A, VGE = 0V IGBT part FWDi part Tc measured point is just under the chips = 100A, Clamp diode part = 100A VCC = 6.3, Inductive load switching operation, Clamp diode part Clamp diode part Case to fin, Thermal compound applied*2 (1/2 module) Min. 5 6.3 Limits Typ. Max. Unit μC V °C/W ns μC °C/W


Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone : If you use this value, Rth(f-a) should be measured just under the chips.


OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)

FREE-WHEEL DIODE AND CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) 25°C 5

Search Part number : "CM100" Included word is 15
Part Number Manufacturer Package Quantity Description
CM100E3U-24H Powerex Inc. Module 92 IGBT MOD CHOP 1200V 100A U SER
CM100MX-24A MITSUBISH MODULE 78
CM100RL-24NF Powerex Inc. Module 69 IGBT MOD 7PAC 1200V 100A NF SER
CM100RX-24S Powerex Inc. Module 88 IGBT MOD 7PAC 1200V 100A NX SER
CM100TF-12 MITSUBISHI Module 103 IGBT MOD 6PAC 600V 100A H SER
CM100TX-24S Powerex Inc. Module 653 IGBT MODULE NX 6-PAC 100A 1200V
CM1000HA-24H Powerex Inc. Module 103 IGBT MOD SGL 1200V 1000A H SER
CM100DY-24A-300G MIT 583
CM100DY-24H Powerex Inc. IGBT 166 IGBT MOD DUAL 1200V 100A H SER
CM100TF-12E MITSUBISHI IGBT 98
CM100RL-24NF MITSUBISHI MODULE 69
CM100RX-24A Powerex Inc. MODULE 69 IGBT MOD 7PAC 1200V 100A NX SER
CM100DY-12H.E MITSUBISHI MODULE 78
CM100DY-28K MITSUBISHI MODULE 78
CM100E3U-24F MITSUBISHI MODULE 78
CM100E3U-24F RELATED PRODUCT PICTURE
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  • CM100E3U-24H
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  • CM100RL-24NF
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  • CM100TF-12
  • CM100TX-24S
  • CM1000HA-24H
  • CM100DY-24A-300G
  • CM100DY-24H
  • CM100TF-12E
  • CM100RL-24NF
  • CM100RX-24A
  • CM100DY-12H.E
  • CM100DY-28K
  • CM100E3U-24F
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