CEU85A3
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Kynix Part #: KY32-CEU85A3
Manufacturer Part#:

CEU85A3

Product Category: IC Chips
Manufacturer: CET
Description:
  datasheetCEU85A3 Datasheet
Package: TO-252
Quantity: 69880 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: CET
Product Category: IC Chips
Features, Applications

N-Channel Enhancement Mode Field Effect Transistor FEATURES

25V, 80A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. & TO-252 package. D


Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed

25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 25

Maximum Power Dissipation C - Derate above 25 C Operating and Store Temperature Range

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 1.8 50 Units C/W


Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS 20A 0.82 VDS = 16A, VGS = 5V VDD = 1A, VGS = 10V, RGEN A V VGS(th) RDS(on) VGS = VDS, = 250μA VGS = 30A VGS m pF BVDSS IDSS IGSSF IGSSR VGS = 250μA VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS 0V V


25 C unless otherwise noted Symbol Test Condition Min Typ Max Units

Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testin


VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics

TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature

TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature

VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current

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