CEM8938
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Manufacturer Part#:

CEM8938

Product Category: IC Chips
Manufacturer: 30000CETSEMI
Description:
  datasheetCEM8938 Datasheet
Package: SOP-8
Quantity: 9908 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: 30000CETSEMI
Product Category: IC Chips
Features, Applications

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

30V, 7A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 38m @VGS -30V, -6A, RDS(ON) = 38m @VGS = -10V. RDS(ON) = 57m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1


Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed

25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units

Maximum Power Dissipation Operating and Store Temperature Range

Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 62.5 Units C/W

Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 1.3A VDS = 7A, VGS = 10V VDD = 1A, VGS = 10V, RGEN A V


25 C unless otherwise noted Test Condition VGS = 250μA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, = 250μA VGS = 7A VGS = 6A VDS = 7A Min Typ Max Units V


Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss

Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, < 10 sec. c.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.


Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = -1.3A VDS = -5A, VGS = -10V VDD = -1A, VGS = -10V, RGEN A V


25 C unless otherwise noted Test Condition VGS = -250μA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, = -250μA VGS = -5A VGS = -4A VDS = -5A Min Typ Max Units V


Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, < 10 sec. c.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.

Search Part number : "CEM89" Included word is 5
Part Number Manufacturer Package Quantity Description
CEM8947 30000CETSEMI SOP-8 78
CEM8958 CEM SOP-8 16352
CEM8958A 30000CETSEMI SOP-8 4060
CEM8968 30000CETSEMI SOP-8 16360
CEM8912 CET SOP-8 29880
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