CEF10N6
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Manufacturer Part#:

CEF10N6

Product Category: IC Chips
Manufacturer: CET
Description:
  datasheetCEF10N6 Datasheet
Package: TO-220F
Quantity: 88 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: CET
Product Category: IC Chips
Features, Applications

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

RDS(ON)=1 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole


ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit W/ C


Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RJC RJA

Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS


Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance VDS = 10A, VGS =10V


Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge


Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage

Notes a.Pulse Test:Pulse Width 300s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.

Search Part number : "CEF10" Included word is 2
Part Number Manufacturer Package Quantity Description
CEF10N65 CET TO-220F 4060
CEF10N6S CET TO-220 168
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