STW7NA100
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Manufacturer Part#:

STW7NA100

Product Category: IC Chips
Manufacturer: ST
Description:
  datasheetSTW7NA100 Datasheet
Package: TO-247
Quantity: 475 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: ST
Product Category: IC Chips
Features, Applications

TYPICAL RDS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247


APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Symbol Parameter Value V DS VDGR ) P tot V ISO T stg Tj March 1998 Drain-source Voltage = 0) Drain- gate Voltage k ) Gate-source Voltage Drain Current (continuous) o C Drain Current (continuous) 100 C Drain Current (pulsed) Total Dissipation o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature


Pulse width limited by safe operating area

TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max ISOWATT218 1.78

Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose


Symbol E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited T j max, < 1%) Single Pulse Avalanche Energy (starting AR , VDD 50 V) Max Value 7 800 Unit A mJ


ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified) OFF

Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions μ A VGS = 0 Min. Typ. Max. Unit μA nA


Zero Gate Voltage DS = Max Rating Drain Current DS = Max Rating Gate-body Leakage Current 30 V

Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance DS = VGS = 10V Test Conditions A 7 Min. 2.25 Typ. 3 1.45 Max. 3.75 1.7 Unit V A


Symbol ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions > I D(on) x R DS(on)max = 25 MHz = 0 Min. 5 Typ. Max. Unit S pF


Symbol t d(on) Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V nC Min. Typ. 28 19 Max. 40 27 Unit ns


Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 10 V Min. Typ. 15 55 Max. 21 77 Unit ns


Symbol SD I SDM rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current = 0 di/dt 14 33 Test Conditions Min. Typ. Max. 28 1.6 Unit μC A


Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % Pulse width limited by safe operating area

Search Part number : "STW7N" Included word is 5
Part Number Manufacturer Package Quantity Description
STW7NA80 ST TO-247 898
STW7NB80 STMRC TO-3P 863
STW7NC80Z ST TO-247 525
STW7NC90Z ST TO-247 523
STW7NK90Z ST TO-247-3 4906 MOSFET N-CH 900V 5.8A TO-247
STW7NA100 RELATED PRODUCT PICTURE
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  • STW7NA80
  • STW7NB80
  • STW7NC80Z
  • STW7NC90Z
  • STW7NK90Z
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