IXTT30N60L2
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Manufacturer Part#:

IXTT30N60L2

Product Category: FETs - Single
Manufacturer: IXYS
Description: MOSFET N-CH 600V 30A TO-268
  datasheetIXTT30N60L2 Datasheet
Package: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Quantity: 6760 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: IXYS
Product Category: FETs - Single
Series: Linear L2?
Packaging: Tube
Unit-Weight: 0.229281 oz
Mounting-Style: SMD/SMT
Package-Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: TO-268
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 540W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 600V
Input-Capacitance-Ciss-Vds: 10700pF @ 25V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 30A (Tc)
Rds-On-Max-Id-Vgs: 240 mOhm @ 15A, 10V
Vgs-th-Max-Id: 4.5V @ 250μA
Gate-Charge-Qg-Vgs: 335nC @ 10V
Pd-Power-Dissipation: 540 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 43 ns
Rise-Time: 65 ns
Id-Continuous-Drain-Current: 30 A
Vds-Drain-Source-Breakdown-Voltage: 600 V
Vgs-th-Gate-Source-Threshold-Voltage: 4.5 V
Rds-On-Drain-Source-Resistance: 240 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 123 ns
Typical-Turn-On-Delay-Time: 43 ns
Qg-Gate-Charge: 335 nC
Forward-Transconductance-Min: 10 S 18 S
Channel-Mode: Enhancement
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