RSD050N10TL
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Manufacturer Part#:

RSD050N10TL

Product Category: FETs - Single
Manufacturer: Rohm Semiconductor
Description: MOSFET N-CH 100V 5A CPT3
  datasheetRSD050N10TL Datasheet
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity: 16854 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Rohm Semiconductor
Product Category: FETs - Single
Series: RSD050N10
Packaging: Digi-ReelR Alternate Packaging
Unit-Weight: 0.139332 oz
Mounting-Style: SMD/SMT
Package-Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: Si
Operating-Temperature: 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: CPT3
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 15W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: 530pF @ 25V
FET-Feature: Logic Level Gate, 4V Drive
Current-Continuous-Drain-Id-25°C: 5A (Ta)
Rds-On-Max-Id-Vgs: 190 mOhm @ 5A, 10V
Vgs-th-Max-Id: 2.5V @ 1mA
Gate-Charge-Qg-Vgs: 14nC @ 10V
Pd-Power-Dissipation: 15 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 15 ns
Rise-Time: 15 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 5 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Vgs-th-Gate-Source-Threshold-Voltage: 1 V to 2.5 V
Rds-On-Drain-Source-Resistance: 145 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 45 ns
Typical-Turn-On-Delay-Time: 10 ns
Qg-Gate-Charge: 14 nC
Forward-Transconductance-Min: 2.5 S
Search Part number : "RSD05" Included word is 4
Part Number Manufacturer Package Quantity Description
RSD050N06 R TO-252 14153
RSD050N06TL Rohm Semiconductor SOT-428 4060 MOSFET N-CH 60V 5A SOT428
RSD050N10 TL ROHM TO252 19766
RSD050N10G TL ROHM SOT-252 23360
RSD050N10TL RELATED PRODUCT PICTURE
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