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FDD10AN06A0
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Manufacturer Part#:

FDD10AN06A0

Product Category: FETs - Single
Manufacturer: Fairchild Semiconductor
Description: MOSFET N-CH 60V 50A D-PAK
  FDD10AN06A0 Datasheet
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity: 33696 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Fairchild Semiconductor
Product Category: FETs - Single
Series: PowerTrenchR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: FDD10AN06A0_NL
Unit-Weight: 0.009184 oz
Mounting-Style: SMD/SMT
Package-Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: Si
Operating-Temperature: -55°C ~ 175°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: TO-252AA
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 135W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 60V
Input-Capacitance-Ciss-Vds: 1840pF @ 25V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 11A (Ta), 50A (Tc)
Rds-On-Max-Id-Vgs: 10.5 mOhm @ 50A, 10V
Vgs-th-Max-Id: 4V @ 250μA
Gate-Charge-Qg-Vgs: 37nC @ 10V
Pd-Power-Dissipation: 135 W
Maximum-Operating-Temperature: + 175 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 32 ns
Rise-Time: 79 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 50 A
Vds-Drain-Source-Breakdown-Voltage: 60 V
Rds-On-Drain-Source-Resistance: 9.4 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 32 ns
Typical-Turn-On-Delay-Time: 8 ns
Channel-Mode: Enhancement
Search Part number : "FDD10" Included word is 6
Part Number Manufacturer Package Quantity Description
FDD10AN06AO FAIRCHILD TO-252 3302
FDD10AN08AO FAIRCHILD TO-252 83
FDD10N20L FAIRCHILD TO-252 1280
FDD10N20LZ FAIRCHILD TO-252 22870
FDD10N20LZTM FSC TO-252-3, DPak (2 Leads + Tab), SC-63 118 MOSFET N-CH 200V 7.6A DPAK-3
FDD107AN06LA0 FAIRCHILD 31580
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