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DMN2400UFB4-7
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Manufacturer Part#:

DMN2400UFB4-7

Product Category: FETs - Single
Manufacturer: Diodes Incorporated
Description: MOSFET N-CH 20V 750MA DFN1006H4
  DMN2400UFB4-7 Datasheet
Package: 3-XFDFN
Quantity: 20360 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Diodes Incorporated
Product Category: FETs - Single
Series: DMN2400
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Package-Case: 3-XFDFN
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: X2-DFN1006-3
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 470mW
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: 36pF @ 16V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 750mA (Ta)
Rds-On-Max-Id-Vgs: 550 mOhm @ 600mA, 4.5V
Vgs-th-Max-Id: 900mV @ 250μA
Gate-Charge-Qg-Vgs: 0.5nC @ 4.5V
Pd-Power-Dissipation: 470 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 9.6 ns
Rise-Time: 3.82 ns
Vgs-Gate-Source-Voltage: 12 V
Id-Continuous-Drain-Current: 750 mA
Vds-Drain-Source-Breakdown-Voltage: 20 V
Vgs-th-Gate-Source-Threshold-Voltage: 0.9 V
Rds-On-Drain-Source-Resistance: 550 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 14.8 ns
Typical-Turn-On-Delay-Time: 4.11 ns
Qg-Gate-Charge: 0.5 nC
Forward-Transconductance-Min: 1 S
Channel-Mode: Enhancement
Search Part number : "DMN24" Included word is 3
Part Number Manufacturer Package Quantity Description
DMN2400UFB-7 Diodes Incorporated 3-XFDFN 15360 MOSFET N-CH 20V 750MA 3DFN
DMN2400UFD-7 DIODES 3-XDFN 24360 MOSFET N-CH 20V 0.9A DFN1212-3
DMN2400UV-7 Diodes Incorporated SOT-563, SOT-666 194030 MOSFET 2N-CH 20V 1.33A SOT563
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