PMGD290UCEAX
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Manufacturer Part#:

PMGD290UCEAX

Product Category: FETs - Arrays
Manufacturer: NXP Semiconductors
Description: MOSFET N/P-CH 20V 6TSSOP
  datasheetPMGD290UCEAX Datasheet
Package: 6-TSSOP, SC-88, SOT-363
Quantity: 4660 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: NXP Semiconductors
Product Category: FETs - Arrays
Series: -
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Package-Case: 6-TSSOP, SC-88, SOT-363
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: 6-TSSOP
Configuration: 1 N-Channel 1 P-Channel
FET-Type: N and P-Channel
Power-Max: 280mW
Transistor-Type: 1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: 83pF @ 10V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 725mA, 500mA
Rds-On-Max-Id-Vgs: 380 mOhm @ 500mA, 4.5V
Vgs-th-Max-Id: 1.3V @ 250μA
Gate-Charge-Qg-Vgs: 0.68nC @ 4.5V
Pd-Power-Dissipation: 990 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 31 ns 72 ns
Rise-Time: 4 ns 30 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: 725 mA
Vds-Drain-Source-Breakdown-Voltage: 20 V
Vgs-th-Gate-Source-Threshold-Voltage: 0.75 V - 0.8 V
Rds-On-Drain-Source-Resistance: 1.8 Ohms
Transistor-Polarity: N-Channel P-Channel
Typical-Turn-Off-Delay-Time: 86 ns 80 ns
Typical-Turn-On-Delay-Time: 6 ns 18 ns
Qg-Gate-Charge: 0.45 nC 0.76 nC
Forward-Transconductance-Min: 1.6 S 610 mS
Channel-Mode: Enhancement
Search Part number : "PMGD2" Included word is 4
Part Number Manufacturer Package Quantity Description
PMGD290XN NXP SOT363 82524
PMGD290XN,115 NXP Semiconductors 6-TSSOP, SC-88, SOT-363 15210 MOSFET 2N-CH 20V 0.86A 6TSSOP
PMGD280UN NXP SOT-363 325349
PMGD280UN,115 NXP Semiconductors 6-TSSOP, SC-88, SOT-363 45160 MOSFET 2N-CH 20V 0.87A 6TSSOP
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