FDMA291P
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Manufacturer Part#:

FDMA291P

Product Category: FETs - Single
Manufacturer: Fairchild Semiconductor
Description: MOSFET P-CH 20V 6.6A MFET 2X2
  datasheetFDMA291P Datasheet
Package: 6-WDFN Exposed Pad
Quantity: 266767 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Fairchild Semiconductor
Product Category: FETs - Single
Series: PowerTrenchR
Packaging: Digi-ReelR Alternate Packaging
Unit-Weight: 0.001058 oz
Mounting-Style: SMD/SMT
Package-Case: 6-WDFN Exposed Pad
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: 6-MicroFET (2x2)
Configuration: Single Quad Drain
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 900mW
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: 1000pF @ 10V
FET-Feature: Logic Level Gate, 1.8V Drive
Current-Continuous-Drain-Id-25°C: 6.6A (Ta)
Rds-On-Max-Id-Vgs: 42 mOhm @ 6.6A, 4.5V
Vgs-th-Max-Id: 1V @ 250μA
Gate-Charge-Qg-Vgs: 14nC @ 4.5V
Pd-Power-Dissipation: 2.4 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 25 ns
Rise-Time: 9 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: 6.6 A
Vds-Drain-Source-Breakdown-Voltage: - 20 V
Rds-On-Drain-Source-Resistance: 36 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 42 ns
Typical-Turn-On-Delay-Time: 13 ns
Forward-Transconductance-Min: 16 S
Channel-Mode: Enhancement
Search Part number : "FDMA2" Included word is 1
Part Number Manufacturer Package Quantity Description
FDMA2002NZ Fairchild Semiconductor 6-WDFN Exposed Pad 29439 MOSFET 2N-CH 30V 2.9A 6-MICROFET
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