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Manufacturer Part#:


Product Category: FETs - Single
Manufacturer: VISHAY
Description: MOSFET N-CH 60V 60A PPAK SO-8
  SIR662DP-T1-GE3 Datasheet
Package: PowerPAK® SO-8
Quantity: 2795 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: VISHAY
Product Category: FETs - Single
Series: SIRxxxDP
Packaging: Reel
Part-Aliases: SIR662DP-GE3
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Tradename: ThunderFET TrenchFET
Package-Case: SO-8
Technology: Si
Number-of-Channels: 1 Channel
Configuration: Single
Transistor-Type: 1 N-Channel
Pd-Power-Dissipation: 104 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Vgs-Gate-Source-Voltage: +/- 20 V
Id-Continuous-Drain-Current: 60 A
Vds-Drain-Source-Breakdown-Voltage: 60 V
Vgs-th-Gate-Source-Threshold-Voltage: 1 V to 2.5 V
Rds-On-Drain-Source-Resistance: 2.7 mOhms
Transistor-Polarity: N-Channel
Qg-Gate-Charge: 64 nC
Forward-Transconductance-Min: 93 S
Search Part number : "SIR66" Included word is 1
Part Number Manufacturer Package Quantity Description
SiR664DP-T1-GE3 VISHAY SO-8 555 MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
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