NTZS3151PT1G
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Manufacturer Part#:

NTZS3151PT1G

Product Category: FETs - Single
Manufacturer: ON Semiconductor
Description: MOSFET P-CH 20V 0.86A SOT-563
  datasheetNTZS3151PT1G Datasheet
Package: SOT-563, SOT-666
Quantity: 57646 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: ON Semiconductor
Product Category: FETs - Single
Series: NTZS3151P
Packaging: Digi-ReelR Alternate Packaging
Unit-Weight: 0.000289 oz
Mounting-Style: SMD/SMT
Package-Case: SOT-563, SOT-666
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: SOT-563
Configuration: Single Quad Drain
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 170mW
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: 458pF @ 16V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 860mA (Ta)
Rds-On-Max-Id-Vgs: 150 mOhm @ 950mA, 4.5V
Vgs-th-Max-Id: 1V @ 250μA
Gate-Charge-Qg-Vgs: 5.6nC @ 4.5V
Pd-Power-Dissipation: 170 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 12 ns
Rise-Time: 12 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: - 950 mA
Vds-Drain-Source-Breakdown-Voltage: - 20 V
Rds-On-Drain-Source-Resistance: 195 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 23.7 ns
Typical-Turn-On-Delay-Time: 5 ns
Channel-Mode: Enhancement
Search Part number : "NTZS3" Included word is 1
Part Number Manufacturer Package Quantity Description
NTZS3151PT1H ON SOT-563, SOT-666 3164 MOSFET P-CH 20V 0.86A SOT563
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