EMG3T2R
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EMG3T2R

Product Category: Transistors (BJT) - Arrays, Pre-Biased
Manufacturer: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT3
  EMG3T2R Datasheet
Package: SC-75, SOT-416
Quantity: 76260 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Rohm Semiconductor
Product Category: Transistors (BJT) - Arrays, Pre-Biased
Series: EMG3
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Package-Case: SC-75, SOT-416
Mounting-Type: Surface Mount
Supplier-Device-Package: EMT3
Configuration: Dual Common Emitter
Power-Max: 150mW
Transistor-Type: 2 NPN - Pre-Biased (Dual)
Current-Collector-Ic-Max: 100mA
Voltage-Collector-Emitter-Breakdown-Max: 50V
Resistor-Base-R1-Ohms: 4.7k
Resistor-Emitter-Base-R2-Ohms: -
DC-Current-Gain-hFE-Min-Ic-Vce: 100 @ 1mA, 5V
Vce-Saturation-Max-Ib-Ic: 150mV @ 250μA, 5mA
Current-Collector-Cutoff-Max: 500nA (ICBO)
Frequency-Transition: 250MHz
Pd-Power-Dissipation: 150 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Collector-Emitter-Voltage-VCEO-Max: 50 V
Transistor-Polarity: NPN
Emitter-Base-Voltage-VEBO: 5 V
Continuous-Collector-Current: 100 mA
DC-Collector-Base-Gain-hfe-Min: 100
Typical-Input-Resistor: 4.7 kOhms
Peak-DC-Collector-Current: 100 mA
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