EMZ7T2R
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Manufacturer Part#:

EMZ7T2R

Product Category: Transistors (BJT) - Arrays
Manufacturer: Rohm Semiconductor
Description: TRANS NPN/PNP 12V 0.5A 6EMT
  datasheetEMZ7T2R Datasheet
Package: SOT-563, SOT-666
Quantity: 20719 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Rohm Semiconductor
Product Category: Transistors (BJT) - Arrays
Series: EMZ7
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Package-Case: SOT-563, SOT-666
Mounting-Type: Surface Mount
Supplier-Device-Package: EMT6
Configuration: Dual
Power-Max: 150mW
Transistor-Type: NPN, PNP
Current-Collector-Ic-Max: 500mA
Voltage-Collector-Emitter-Breakdown-Max: 12V
DC-Current-Gain-hFE-Min-Ic-Vce: 270 @ 10mA, 2V
Vce-Saturation-Max-Ib-Ic: 250mV @ 10mA, 200mA
Current-Collector-Cutoff-Max: 100nA (ICBO)
Frequency-Transition: 320MHz, 260MHz
Pd-Power-Dissipation: 150 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Collector-Emitter-Voltage-VCEO-Max: 12 V
Transistor-Polarity: NPN PNP
Collector-Emitter-Saturation-Voltage: 90 mV - 100 mV
Collector-Base-Voltage-VCBO: 15 V
Emitter-Base-Voltage-VEBO: 6 V
Maximum-DC-Collector-Current: 0.5 A
Gain-Bandwidth-Product-fT: 320 MHz 260 MHz
Continuous-Collector-Current: 500 mA
DC-Collector-Base-Gain-hfe-Min: 270
DC-Current-Gain-hFE-Max: 680
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