FDZ7064S
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Manufacturer Part#:

FDZ7064S

Product Category: IC Chips
Manufacturer: FAIRCHILD
Description:
  datasheetFDZ7064S Datasheet
Package: BGA
Quantity: 7060 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: FAIRCHILD
Product Category: IC Chips
Features, Applications

Features, Applications


This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild's 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON).


Features

30 V. RDS(ON) m @ VGS 10 V RDS(ON) m @ VGS 4.5 V Occupies only mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.8 mm height when mounted to PCB 4 mm2 Footprint High power and current handling capability.


Applications

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range


R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case


Device Marking 7064S Device FDZ7064S Reel Size 13" Tape width 12mm Quantity 3000

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage


Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance


Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance

td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge


VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS 3.2 A


Notes: JA is determined with the device mounted a 1 in2 2 oz. copper pad x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, R? JB, is defined for reference. For R? JC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R? JC and R? JB are guaranteed by design while JA is determined by the user's board design. a) 56°C/W when 2 mounted a 1in pad 2 oz copper 119°C/W when mounted on a minimum pad 2 oz copper


Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

60 IS, REVERSE DRAIN CURRENT (A) VDS 5V 50 ID, DRAIN CURRENT (A) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.



Search Part number : "FDZ70" Included word is 2
Part Number Manufacturer Package Quantity Description
FDZ7064AS Fairchild 30-WFBGA 986 MOSFET N-CH 30V 13.5A BGA
FDZ7064N KEXIN BGA 3303
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