HAT1038RJ-EL-E
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Manufacturer Part#:

HAT1038RJ-EL-E

Product Category: IC Chips
Manufacturer: RENESAS
Description:
  datasheetHAT1038RJ-EL-E Datasheet
Package: SOP-8
Quantity: 4060 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: RENESAS
Product Category: IC Chips
Features, Applications

Features, Applications

Silicon P Channel Power MOS FET High Speed Power Switching

Features

For Automotive Application (at Type Code "J") Low on-resistance Capable 4 V gate drive High density mounting


Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: HAT1038R HAT1038RJ Symbol VDSS VGSS ID (pulse) IDR IAP EAR


PW 10 μs, duty cycle 1% 1 Drive operation: When using the glass epoxy board (FR4 mm), s 2 Drive operation: When using the glass epoxy board (FR4 mm), 10 s Value at Tch Rg 50


Item Drain to source breakdown voltage Gate to source leak voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT1038R HAT1038RJ Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min Typ Max Unit V ns Test Conditions = -10 mA, VGS = ±100 μA, VDS = 0 VGS ±16 V, VDS = 0 VDS -60 V, VGS = 0 VDS -48 V, VGS = 125°C VDS -1 mA Note -2 A, VGS -2 A, VGS -4 V Note -2 A, VDS -10 V VDS -10 V VGS MHz VGS -2 A, VDD -30 V


Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test


Test Condition: When using the glass epoxy board (FR4 mm), 10 s

Note 6: When using the glass epoxy board (FR4 mm)

Drain to Source Saturation Voltage vs. Gate to Source Voltage

Drain to Source on State Resistance RDS (on) Drain to Source Saturation Voltage VDS (on) (V)

Static Drain to Source on State Resistance vs. Drain Current



Search Part number : "HAT10" Included word is 15
Part Number Manufacturer Package Quantity Description
HAT1089C-EL-E RENESAS SOT323 25945
HAT1000-S LEM Module 103 SENSOR CURRENT HALL 1000A AC/DC
HAT1023R-EL-E 10RENESAS SOP-8 40561
HAT1031T-EL HITACHI TSOP 33097
HAT1041R-EL-E RENESAS SSOP-8 4277
HAT1053M-EL-E RENESAS SOT-163 40380
HAT1097RJ-EL RENESAS SOP 8560
HAT1001F-ER HIT SOP-8 2472
HAT1024R RENESAS SOP-8 53360
HAT1033R-EL-E RENESAS SSOP-8 6560
HAT1041T-EL HITACHI TSSOP8 15360
HAT1054R-EL RENESAS SOP8 3606
HAT1097RJ-EL-E RENESAS SOP8 7250
HAT1043M HITACHI SOT-23-6 Thin, TSOT-23-6 33160 MOSFET P-CH 20V 4.4A 6TSOP
HAT1004F-EL KEXIN SOP08 3560
HAT1038RJ-EL-E RELATED PRODUCT PICTURE
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