MT46V16M16P-5BIT:G
Images are for reference only See Product Specifications
Manufacturer Part#:

MT46V16M16P-5BIT:G

Product Category: IC Chips
Manufacturer: MT
Description:
  datasheetMT46V16M16P-5BIT:G Datasheet
Package: TSOP
Quantity: 466 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Real Time Availability
Stock:466 Can Ship Immediately
Enter Quantity:
Minimum:1
Multiples:1
Buy Buy
1+: $0.00000
10+: $0.00000
100+: $0.00000
500+: $0.00000
1000+: $0.00000
Warm Tips:Please fill out the below form and we will contact you as soon as possible.
*Buy Quantity:   Target Price: (USD)
*Contact Name:   Company Name:
*Email:    
Phone: (Including the Country Code)
Remark:
  Submit
SpecificationsPackage PaymentShippingAfter-sales Guarantee
Manufacturer: MT
Product Category: IC Chips
Features, Applications

Features

VDD +2.5V ±0.2V, VDDQ +2.5V ±0.2V Bidirectional data strobe (DQS) transmitted/received with data, i.e., source-synchronous data capture (x16 has two - one per byte) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge-aligned with data for READs; center-aligned with data for WRITEs DLL to align DQ and DQS transitions with CK Four internal banks for concurrent operation Data mask (DM) for masking write data (x16 has two - one per byte) Programmable burst lengths: or 8 Auto Refresh and Self Refresh Modes Longer-lead TSOP for improved reliability (OCPL) 2.5V I/O (SSTL_2 compatible) Concurrent auto precharge option supported tRAS lockout supported (tRAP = tRCD) OPTIONS


Configuration 64 Meg 4 (16 Meg banks) 32 Meg 8 (8 Meg banks) 16 Meg 16 (4 Meg x 4 banks) Plastic Package - OCPL 66-pin TSOP 66-pin TSOP (lead-free)1 Plastic Package 60-Ball FBGA 9mm) 60-Ball FBGA 9mm)(lead-free)1 60-Ball FBGA 8mm) 60-Ball FBGA 8mm) (lead-free)1 Timing - Cycle Time 2.5 (DDR333)2 (FBGA only) 2.5 (DDR333)2 (TSOP only) (DDR266B)5, 6 Self Refresh Standard Low-Power Self Refresh High-Speed Process Enhancement Standard High Speed Temperature Rating Standard to +70°C) Industrial Temperature to +85°C)


For the latest data sheet revisions, please refer to the Microna Web site: www.micron.com/datasheets


x8 x16 VDD NC DQ0 VDDQ DQ1 DQ2 VSSQ VssQ DQ2 DQ4 VDDQ DQ3 DQ6 VSSQ VssQ DQ7 NC VDDQ NC LDQS NC VDD DNU NC LDM WE# CAS# RAS# CS# A2 A3 VDD


x16 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS DNU VREF VSS UDM CK# CK CKE A5 A4 VSS


x8 VSS DQ7 VSSQ NC DQ6 VDDQ NC DQ5 VSSQ NC DQ4 VDDQ NC VSSQ DQS DNU VREF VSS DM CK# CK CKE A5 A4 VSS


x4 VSS NC VSSQ NC DQ3 VDDQ NC VSSQ NC DQ2 VDDQ NC VSSQ DQS DNU VREF VSS DM CK# CK CKE A5 A4 VSS

Configuration Refresh Count Row Addressing Bank Addressing Column Addressing 16 Meg banks 2K (A0-A9,A11)


CLOCK RATE7 CL=2 DATA-OUT ACCESS DQS-DQ CL=2.5 WINDOW8 WINDOW SKEW

Contact Micron for availability of lead-free products. Supports PC2700 modules with 2.5-3-3 timing. Supports PC2100 modules with 2-2-2 timing. Supports PC2100 modules with 2-3-3 timing. Supports PC2100 modules with 2.5-3-3 timing. Supports PC1600 modules with 2-2-2 timing. CL=CAS(READ) latency. Minimum clock rate -6R, -75)


PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

Example Part Number: H MT46V Configuration Package Speed Special Temperature Options

Operating Temp Configuration 64 Meg 4 32 Meg 8 16 Meg 32M8 16M16 Special Options Standard Package 400-mil TSOP 400-mil TSOP (lead-free) 16x9 FBGA 16x9 FBGA (lead-free) 14x9 FBGA 14x9 FBGA (lead-free) -75Z -75 Speed Grade tCK = 2.5 tCK = 2.5 tCK = 2.5 tCK = 2 tCK = 2 tCK 2.5 IT Standard Industrial Temp


The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quadbank DRAM. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2nprefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 256Mb DDR SDRAM effectively consists of a single 2n-bit wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-halfclock-cycle data transfers at the I/O pins. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte and one for the upper byte. The 256Mb DDR SDRAM operates from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data


is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. The DDR SDRAM provides for programmable READ or WRITE burst lengths or 8 locations. An auto precharge function may be enabled to provide a selftimed row precharge that is initiated at the end of the burst access. As with standard SDR SDRAMs, the pipelined, multibank architecture of DDR SDRAMs allows for concurrent operation, thereby effectively providing high bandwidth by hiding row precharge and activation time. An auto refresh mode is provided, along with a power-saving power-down mode. All inputs are compatible with the JEDEC standard for SSTL_2. All full drive option outputs are SSTL_2, Class II-compatible. NOTE: 1. The functionality and the timing specifications discussed in this data sheet are for the DLL-enabled mode of operation. 2. Throughout the data sheet, the various figures and text refer to DQs as "DQ." The DQ term to be interpreted as any and all DQ collectively, unless specifically stated otherwise. Additionally, the x16 is divided into two bytes, the lower byte and upper byte. For the lower byte (DQ0 through DQ7) DM refers to LDM and DQS refers to LDQS. For the upper byte (DQ8 through DQ15) DM refers to UDM and DQS refers to UDQS. 3. Complete functionality is described throughout the document and any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. 4. Any specific requirement takes precedence over a general statement.


Micron Technology, Inc., reserves the right to change products or specifications without notice. c2003 Micron Technology, Inc.


Features.1 General Description.2 Functional Description.12 Initialization.12 Register Definition.12 Mode Register.12 Burst Length.13 Burst Type.13 Read Latency.14 Operating Mode.14 Extended Mode Register.15 Output Drive Strength.15 DLL DESELECT.17 NO OPERATION (NOP).17 LOAD MODE WRITE.17 PRECHARGE.17 Auto Precharge.17 BURST TERMINATE.18 AUTO REFRESH.18 SELF REFRESH.18 Operations.19 Bank/Row WRITEs.29 PRECHARGE.40 Power-Down (CKE Not Active).40 Absolute Maximum Ratings.46 Notes.59 Data Sheet Designation.80



Search Part number : "MT46V" Included word is 15
Part Number Manufacturer Package Quantity Description
MT46V32M16P-5B IT : J MICRON 66TSOP 123
MT46V32M8P-5B MICRON TSSOP 646
MT46V64M8p-6T MICRON TSSOP 2308
MT46V8M16TG-75B MICRON SSOP6 3579
MT46V8M16P-6T D MICRON TSOP 88
MT46V32M16P-5B IT:J Micron Technology Inc. 66-TSSOP (0.400", 10.16mm Width) 132 IC DDR SDRAM 512MBIT 5NS 66TSOP
MT46V128M8P-6T:A Micron Technology Inc. 66-TSSOP (0.400", 10.16mm Width) 2096 IC DDR SDRAM 1GBIT 6NS 66TSOP
MT46V16M16TG-75 IT:F TR Micron Technology Inc. 66-TSSOP (0.400", 10.16mm Width) 71 IC DDR SDRAM 256MBIT 66TSOP
MT46V256M4P-6T:A Micron Technology Inc. 66-TSSOP (0.400", 10.16mm Width) 1249 IC DDR SDRAM 1GBIT 6NS 66TSOP
MT46V32M16BN-6 IT:F Micron Technology Inc. 60-TFBGA 15378 IC DDR SDRAM 512MBIT 6NS 60FBGA
MT46V64M8BN-5B:F Micron Technology Inc. 60-TFBGA 1014 IC DDR SDRAM 512MBIT 5NS 60FBGA
MT46V16M16BG-75:F Micron FBGA 6185
MT46V16M16P-5B MICRON TSSOP 3200
MT46V16M16P-5BIT:K MICRON TSSOP 2707
MT46V16M16TG-5B MICRON TSOP66 10200
MT46V16M16P-5BIT:G RELATED PRODUCT PICTURE
left
  • MT46V32M16P-5B IT : J
  • MT46V32M8P-5B
  • MT46V64M8p-6T
  • MT46V8M16TG-75B
  • MT46V8M16P-6T D
  • MT46V32M16P-5B IT:J
  • MT46V128M8P-6T:A
  • MT46V16M16TG-75 IT:F TR
  • MT46V256M4P-6T:A
  • MT46V32M16BN-6 IT:F
  • MT46V64M8BN-5B:F
  • MT46V16M16BG-75:F
  • MT46V16M16P-5B
  • MT46V16M16P-5BIT:K
  • MT46V16M16TG-5B
right
MT46V16M16P-5BIT:G Related keyword.
  • MT46V16M16P-5BIT:G Price
  • MT46V16M16P-5BIT:G Distributor
  • MT46V16M16P-5BIT:G Manufacturer
  • MT46V16M16P-5BIT:G Technical Data
  • MT46V16M16P-5BIT:G PDF
  • MT46V16M16P-5BIT:G Datasheet
  • MT46V16M16P-5BIT:G Picture
  • MT46V16M16P-5BIT:G Image
  • MT46V16M16P-5BIT:G Part
  • MT46V16M16P-5BIT:G Stock
  • MT46V16M16P-5BIT:G Inventory
  • MT46V16M16P-5BIT:G Rfq
  • Buy MT46V16M16P-5BIT:G
  • MT46V16M16P-5BIT:G Inquiry
  • MT46V16M16P-5BIT:G Online Order

Comment

Latest Products

DH82C224 S R13E  Intel

DH82C224 S R13EIC Chips, ,Chipsets C224 Chipset Server FCBGA-708

Learn More

DH82C224 S R17A  Intel

DH82C224 S R17AIC Chips, ,Chipsets C224 Chipset Server FCBGA-708

Learn More

DH82Q85 S R174  Intel

DH82Q85 S R174IC Chips, ,Chipsets Q85 Chipset Desktop FCBGA-708

Learn More

DH82Q87 S R19E  Intel

DH82Q87 S R19EIC Chips, ,Chipsets Q87 Chipset Desktop FCBGA-708

Learn More

BD82QS67 S LHAG  Intel

BD82QS67 S LHAGIC Chips, ,Chipsets QS67 Express Chipset Mobile FCBGA-1071

Learn More

HOW TO BUY ELECTRONIC COMPONENTS
How to buy
Search
Inquiry
Order
Track
 
Delivery
FedEx
UPS
DHL
TNT
 
Payment Terms
By PayPal
By Credit Card
By Wire Transfer
By Western Union
 
After-sales Service
Quality Control
Guarantee
Return & Replacement
 
 
About us
Company Profile
Our History
Corporate Culture
Contact us
Join us
© 2008-2016 kynix.com all rights reserved.
Tel:00852-81928838    Email:info@kynix.com