HGT1S12N60C3DS
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HGT1S12N60C3DS

Product Category: IC Chips
Manufacturer: FAIRCHILD
Description:
  datasheetHGT1S12N60C3DS Datasheet
Package: DIP
Quantity: 6714 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: FAIRCHILD
Product Category: IC Chips
Features, Applications

Features, Applications


24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182.


Features

= 25oC Typical Fall Time 150oC. 210ns Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode


NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in Tape and Reel, i.e., HGT1S12N60C3DS9A.


= 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage. BVCES Collector Current Continuous 110oC. IC110 Average Diode Forward Current at 110oC. I(AVG) Collector Current Pulsed (Note 1). ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed. VGEM Switching Safe Operating Area = 150oC (Figure 14). SSOA Power Dissipation Total 25oC. PD Power Dissipation Derating > 25oC. Operating and Storage Junction Temperature Range. TJ, TSTG Maximum Lead Temperature for Soldering. TL Short Circuit Withstand Time (Note 2) at VGE = 15V. tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. tSC to W W/oC


CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 25.

= 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS = 250μA, VGE = 0V VCE = BVCES = 150oC MIN 600 3.0 VCE(PK) = 480V VCE(PK) 80 24 TYP MAX UNITS nA A


Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current

Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA

Gate to Emitter Plateau Voltage On-State Gate Charge

Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage


PARAMETER Diode Reverse Recovery Time = 25oC, Unless Otherwise Specified (Continued) SYMBOL trr TEST CONDITIONS IEC = 12A, dIEC/dt = 200A/μs IEC = 1.0A, dIEC/dt = 200A/μs Thermal Resistance RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending at the point where the collector current equals zero = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. MIN TYP 32 23 MAX UNITS ns


ICE, COLLECTOR TO EMITTER CURRENT (A) 80 DUTY CYCLE <0.5%, VCE 10V 70 PULSE DURATION = 250μs VGE, GATE TO EMITTER VOLTAGE (V) = 25oC ICE, COLLECTOR TO EMITTER CURRENT (A) 7.0V VCE, COLLECTOR TO EMITTER VOLTAGE (V) 10 10.0V PULSE DURATION = 250μs, DUTY CYCLE = 25oC VGE 15.0V 12.0V 



Search Part number : "HGT1S" Included word is 15
Part Number Manufacturer Package Quantity Description
HGT1S3N60A4DS INTERSIL TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 138 IGBT 600V 17A 70W D2PAK
HGT1S12N60C3S FAIRCHIL TO-263 980
HGT1S3N60A4DS9A Fairchild Semiconductor TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 39075 IGBT 600V 17A 70W D2PAK
HGT1S12N60C3S9A FSC TO-263 15660
HGT1S14N36G3VLS Fairchild Semiconductor TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 15860 IGBT 390V 18A 100W TO263AB
HGT1S3N60B3DS INTERSIL TO-263 2860
HGT1S14N36G3VLT Fairchild Semiconductor TO-220-3 980 IGBT 390V 18A 100W TO220AB
HGT1S3N60C3DS9A INTERSIL TO-263-2 5860
HGT1S14N36GVLS FSC TO-263 78
HGT1S5N120CN HARRIS TO-263 698
HGT1S7N60A4DS Fairchild Semiconductor TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 1130 IGBT 600V 34A 125W TO263AB
HGT1S14N40G3VLS FAI TO263 1130
HGT1S14N41G3VLS9A FAI TO263 1125
HGT1S7N60A4DS9A FSC TO-263 18288
HGT1S14N41G3VLSR4874 FAIRCHILD SOT-263 2660
HGT1S12N60C3DS RELATED PRODUCT PICTURE
left
  • HGT1S3N60A4DS
  • HGT1S12N60C3S
  • HGT1S3N60A4DS9A
  • HGT1S12N60C3S9A
  • HGT1S14N36G3VLS
  • HGT1S3N60B3DS
  • HGT1S14N36G3VLT
  • HGT1S3N60C3DS9A
  • HGT1S14N36GVLS
  • HGT1S5N120CN
  • HGT1S7N60A4DS
  • HGT1S14N40G3VLS
  • HGT1S14N41G3VLS9A
  • HGT1S7N60A4DS9A
  • HGT1S14N41G3VLSR4874
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