MRF9011LT1
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Manufacturer Part#:

MRF9011LT1

Product Category: IC Chips
Manufacturer: MOT
Description:
  datasheetMRF9011LT1 Datasheet
Package: SOT143
Quantity: 4510 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: MOT
Product Category: IC Chips
Features, Applications

Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation to 2.5 GHz. Also usable in applications requiring fast switching times. High Current-Gain Bandwidth Product Low Noise Figure = 1.0 GHz NF(matched) 1.8 dB (Typ) (MRF9011LT1) NF(matched) 1.9 dB (Typ) (MMBR901LT1, T3) High Power Gain Gpe(matched) 13.5 dB (Typ) = 1.0 GHz (MRF9011LT1) Gpe(matched) 12.0 dB (Typ) = 1.0 GHz (MMBR901LT1, T3) Guaranteed RF Parameters (MRF9011LT1) Surface Mounted & SOT-143 Offer Improved RF Performance Lower Package Parasitics High Gain Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel


Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation T3; MRF9011LT1 Derate above 25°C Storage Temperature Range Maximum Junction Temperature All Tstg TJ(max) Characteristic Storage Temperature Thermal Resistance, Junction to Case MMBR901LT1, T3 Symbol Tstg RJC PD(max) to +150 Watt mW/°C °C Symbol VCEO VCBO VEBO IC Value Unit Vdc mAdc


= 7A NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package.

Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, = 0) Collector Cutoff Current (VCB = 15 Vdc, = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO Vdc nAdc


Current-Gain Bandwidth Product (IC = 15 mAdc, VCE = 10 Vdc, = 1.0 GHz) Collector-Base Capacitance (VCB = 10 Vdc, = 1.0 MHz) MRF9011LT1 fT Ccb 0.55 1.0 GHz pF


Power Gain at Minimum Noise Figure (VCE = 10 Vdc, = 5.0 mA, = 1.0 GHz) Minimum Noise Figure (Figure 3) (VCE = 10 Vdc, = 5.0 mA, = 1.0 GHz) Insertion Gain in 50 System (VCE = 10 Vdc, = 5.0 mA, = 1.0 GHz) Minimum Noise Figure (Figure 3) (VCE = 6.0 Vdc, = 5.0 mA, = 1.0 GHz) (VCE = 10 Vdc, = 5.0 mA, = 1.0 GHz) MRF9011LT1 GNFmin NFmin S212 NFmin T3 dB


Output Capacitance (VCB = 10 Vdc, = 5.0 mAdc, = 1.0 GHz) Common-Emitter Amplifier Gain (VCC = 6.0 Vdc, = 5.0 mAdc, = 1.0 GHz) Cobo MMBR901LT1 Gpe 1.0 pF


Figure 1. Collector-Base Capacitance versus Collector-Base Voltage

Figure 2. Gain and Noise Figure versus Collector Current

RF OUTPUT RF INPUT *BIAS TEE **SLUG TUNER D.U.T. **SLUG TUNER *BIAS TEE


Search Part number : "MRF90" Included word is 15
Part Number Manufacturer Package Quantity Description
MRF9011LT1G SOT143 1130
MRF9080 FREE/MOT SMD 2260
MRF9011T1G GP/ON SOT143 730
MRF9080L FSL SMD 119
MRF9030L FSL SMD 117
MRF9080S MOTOROLA NA 440
MRF9030LS MOT NA 75
MRF9080SR3 MOTOROLA NA 580
MRF9030MR1 FREESCALE TO-270-2 695
MRF9085 FREE/MOT SMD 980
MRF904 Microsemi Corporation CAN-4 851 TRANS NPN 15V 30MA TO-72
MRF9085L FSL SMD 502
MRF9085LSR3 MOT NI-780S 4400 IC MOSFET RF N-CHAN NI-780S
MRF9045L FSL SMD 2560
MRF9045LS MOT NA 136
MRF9011LT1 RELATED PRODUCT PICTURE
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